N-channel transistor IRG4PH50K, 24A, TO-247, TO-247 ( AC ) MOS-N-IGBT, 1200V

N-channel transistor IRG4PH50K, 24A, TO-247, TO-247 ( AC ) MOS-N-IGBT, 1200V

Quantity
Unit price
1-4
8.38$
5-9
7.57$
10-24
6.94$
25-49
6.45$
50+
5.70$
Quantity in stock: 32

N-channel transistor IRG4PH50K, 24A, TO-247, TO-247 ( AC ) MOS-N-IGBT, 1200V. Ic(T=100°C): 24A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ) MOS-N-IGBT. Collector/emitter voltage Vceo: 1200V. Assembly/installation: PCB through-hole mounting. C(in): 2800pF. CE diode: no. Channel type: N. Collector current: 45A. Cost): 140pF. Function: Ic 45A @ 25°C, 24A @ 110°C, Icm 90A (pulsed). Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V. Gate/emitter voltage VGE: 20V. Germanium diode: no. Ic(pulse): 90A. Number of terminals: 3. Operating temperature: -40...+150°C. Pd (Power Dissipation, Max): 200W. RoHS: yes. Saturation voltage VCE(sat): 2.77V. Spec info: td (on) 36ns, td(off) 200ns, TJ=25°C. Td(off): 200 ns. Td(on): 36ns. Original product from manufacturer: International Rectifier. Quantity in stock updated on 11/06/2025, 09:45

Technical documentation (PDF)
IRG4PH50K
25 parameters
Ic(T=100°C)
24A
Housing
TO-247
Housing (according to data sheet)
TO-247 ( AC ) MOS-N-IGBT
Collector/emitter voltage Vceo
1200V
Assembly/installation
PCB through-hole mounting
C(in)
2800pF
CE diode
no
Channel type
N
Collector current
45A
Cost)
140pF
Function
Ic 45A @ 25°C, 24A @ 110°C, Icm 90A (pulsed)
Gate/emitter voltage VGE(th) min.
3V
Gate/emitter voltage VGE(th)max.
6V
Gate/emitter voltage VGE
20V
Germanium diode
no
Ic(pulse)
90A
Number of terminals
3
Operating temperature
-40...+150°C
Pd (Power Dissipation, Max)
200W
RoHS
yes
Saturation voltage VCE(sat)
2.77V
Spec info
td (on) 36ns, td(off) 200ns, TJ=25°C
Td(off)
200 ns
Td(on)
36ns
Original product from manufacturer
International Rectifier