N-channel transistor IRG4PH40U, 21A, TO-247, TO-247 ( AC ) MOS-N-IGBT, 1200V

N-channel transistor IRG4PH40U, 21A, TO-247, TO-247 ( AC ) MOS-N-IGBT, 1200V

Quantity
Unit price
1-4
6.08$
5-9
5.75$
10-24
5.34$
25-49
4.92$
50+
4.18$
Quantity in stock: 35

N-channel transistor IRG4PH40U, 21A, TO-247, TO-247 ( AC ) MOS-N-IGBT, 1200V. Ic(T=100°C): 21A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ) MOS-N-IGBT. Collector/emitter voltage Vceo: 1200V. Assembly/installation: PCB through-hole mounting. C(in): 1800pF. CE diode: no. Channel type: N. Collector current: 41A. Cost): 120pF. Function: Up to 40kHz in hard switching,>200kHz res.mode. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V. Gate/emitter voltage VGE: 20V. Germanium diode: no. Ic(pulse): 82A. Maximum saturation voltage VCE(sat): 3.1V. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 160W. RoHS: yes. Saturation voltage VCE(sat): 2.43V. Td(off): 220 ns. Td(on): 24 ns. Original product from manufacturer: International Rectifier. Quantity in stock updated on 11/06/2025, 09:45

Technical documentation (PDF)
IRG4PH40U
25 parameters
Ic(T=100°C)
21A
Housing
TO-247
Housing (according to data sheet)
TO-247 ( AC ) MOS-N-IGBT
Collector/emitter voltage Vceo
1200V
Assembly/installation
PCB through-hole mounting
C(in)
1800pF
CE diode
no
Channel type
N
Collector current
41A
Cost)
120pF
Function
Up to 40kHz in hard switching,>200kHz res.mode
Gate/emitter voltage VGE(th) min.
3V
Gate/emitter voltage VGE(th)max.
6V
Gate/emitter voltage VGE
20V
Germanium diode
no
Ic(pulse)
82A
Maximum saturation voltage VCE(sat)
3.1V
Number of terminals
3
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
160W
RoHS
yes
Saturation voltage VCE(sat)
2.43V
Td(off)
220 ns
Td(on)
24 ns
Original product from manufacturer
International Rectifier