N-channel transistor IRG4PC60FP, 60A, TO-247, TO-247 ( AC ), 600V

N-channel transistor IRG4PC60FP, 60A, TO-247, TO-247 ( AC ), 600V

Quantity
Unit price
1-4
11.30$
5-9
10.46$
10-24
9.73$
25+
9.00$
Quantity in stock: 4

N-channel transistor IRG4PC60FP, 60A, TO-247, TO-247 ( AC ), 600V. Ic(T=100°C): 60A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Collector/emitter voltage Vceo: 600V. Assembly/installation: PCB through-hole mounting. C(in): 6050pF. CE diode: no. Channel type: N. Collector current: 90A. Cost): 360pF. Function: 'Fast Speed ​​IGBT'. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V. Gate/emitter voltage VGE: 20V. Germanium diode: no. Ic(pulse): 360A. Maximum saturation voltage VCE(sat): 1.8V. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 520W. RoHS: yes. Saturation voltage VCE(sat): 1.5V. Td(off): 310 ns. Td(on): 42 ns. Original product from manufacturer: International Rectifier. Quantity in stock updated on 11/06/2025, 09:45

Technical documentation (PDF)
IRG4PC60FP
25 parameters
Ic(T=100°C)
60A
Housing
TO-247
Housing (according to data sheet)
TO-247 ( AC )
Collector/emitter voltage Vceo
600V
Assembly/installation
PCB through-hole mounting
C(in)
6050pF
CE diode
no
Channel type
N
Collector current
90A
Cost)
360pF
Function
'Fast Speed ​​IGBT'
Gate/emitter voltage VGE(th) min.
3V
Gate/emitter voltage VGE(th)max.
6V
Gate/emitter voltage VGE
20V
Germanium diode
no
Ic(pulse)
360A
Maximum saturation voltage VCE(sat)
1.8V
Number of terminals
3
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
520W
RoHS
yes
Saturation voltage VCE(sat)
1.5V
Td(off)
310 ns
Td(on)
42 ns
Original product from manufacturer
International Rectifier