N-channel transistor IRG4PC40FDPBF, TO-247, TO-247AC, 27A, TO-247 ( AC ), 600V

N-channel transistor IRG4PC40FDPBF, TO-247, TO-247AC, 27A, TO-247 ( AC ), 600V

Quantity
Unit price
1-4
8.05$
5-14
7.45$
15-24
6.96$
25-49
6.51$
50+
5.90$
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Quantity in stock: 23

N-channel transistor IRG4PC40FDPBF, TO-247, TO-247AC, 27A, TO-247 ( AC ), 600V. Housing: TO-247. Housing (JEDEC standard): TO-247AC. Ic(T=100°C): 27A. Housing (according to data sheet): TO-247 ( AC ). Collector/emitter voltage Vceo: 600V. Assembly/installation: PCB through-hole mounting. C(in): 2200pF. CE diode: yes. Channel type: N. Collector current Ic [A]: 49A. Collector current: 49A. Collector peak current Ip [A]: 200A. Collector-emitter voltage Uce [V]: 600V. Component family: IGBT transistor with built-in high-speed free-wheeling diode. Configuration: PCB through-hole mounting. Cost): 140pF. Function: Ultra Fast, for high operating frequencies 8-40kHz. Gate breakdown voltage Ugs [V]: 6V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V. Gate/emitter voltage VGE: 20V. Germanium diode: no. Ic(pulse): 84A. Manufacturer's marking: IRG4PC40FD. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 160W. Number of terminals: 3. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 160W. RoHS: yes. Saturation voltage VCE(sat): 1.85V. Switch-off delay tf[nsec.]: 230 ns. Switch-on time ton [nsec.]: 63 ns. Td(off): 230 ns. Td(on): 63 ns. Trr Diode (Min.): 42 ns. Original product from manufacturer: International Rectifier. Quantity in stock updated on 11/06/2025, 09:45

Technical documentation (PDF)
IRG4PC40FDPBF
38 parameters
Housing
TO-247
Housing (JEDEC standard)
TO-247AC
Ic(T=100°C)
27A
Housing (according to data sheet)
TO-247 ( AC )
Collector/emitter voltage Vceo
600V
Assembly/installation
PCB through-hole mounting
C(in)
2200pF
CE diode
yes
Channel type
N
Collector current Ic [A]
49A
Collector current
49A
Collector peak current Ip [A]
200A
Collector-emitter voltage Uce [V]
600V
Component family
IGBT transistor with built-in high-speed free-wheeling diode
Configuration
PCB through-hole mounting
Cost)
140pF
Function
Ultra Fast, for high operating frequencies 8-40kHz
Gate breakdown voltage Ugs [V]
6V
Gate/emitter voltage VGE(th) min.
3V
Gate/emitter voltage VGE(th)max.
6V
Gate/emitter voltage VGE
20V
Germanium diode
no
Ic(pulse)
84A
Manufacturer's marking
IRG4PC40FD
Max temperature
+150°C.
Maximum dissipation Ptot [W]
160W
Number of terminals
3
Number of terminals
3
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
160W
RoHS
yes
Saturation voltage VCE(sat)
1.85V
Switch-off delay tf[nsec.]
230 ns
Switch-on time ton [nsec.]
63 ns
Td(off)
230 ns
Td(on)
63 ns
Trr Diode (Min.)
42 ns
Original product from manufacturer
International Rectifier