N-channel transistor IRG4BC30W, 12A, TO-220, TO-220AB, 600V. Ic(T=100°C): 12A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 600V. Assembly/installation: PCB through-hole mounting. C(in): 980pF. CE diode: no. Channel type: N. Collector current: 23A. Conditioning unit: 50. Conditioning: plastic tube. Cost): 71pF. Function: power MOSFET transistor up to 150 kHz. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V. Gate/emitter voltage VGE: 20V. Germanium diode: no. Ic(pulse): 92A. Marking on the case: IRG 4BC30W. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 100W. RoHS: yes. Saturation voltage VCE(sat): 2.1V. Spec info: Vce(on)--2.1V (IC=12A), 2.45V (IC=23A). Td(off): 99 ns. Td(on): 25 ns. Original product from manufacturer: International Rectifier. Quantity in stock updated on 11/06/2025, 09:45