N-channel transistor IRFZ48NPBF, TO220AB, 55V, 55V, 0.014 Ohms, 55V

N-channel transistor IRFZ48NPBF, TO220AB, 55V, 55V, 0.014 Ohms, 55V

Quantity
Unit price
1-49
2.24$
50+
1.64$
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Quantity in stock: 355

N-channel transistor IRFZ48NPBF, TO220AB, 55V, 55V, 0.014 Ohms, 55V. Housing: TO220AB. Vdss (Drain to Source Voltage): 55V. Drain-source voltage (Vds): 55V. Housing (JEDEC standard): -. On-resistance Rds On: 0.014 Ohms. Drain-source voltage Uds [V]: 55V. Channel type: N. Ciss Gate Capacitance [pF]: 1970pF. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Drain current Id (A) @ 25°C: 64A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.014 Ohms @ 32A. Drive Voltage: 10V. Features: -. Gate breakdown voltage Ugs [V]: 4 v. Gate/source voltage Vgs max: -20V. Id @ Tc=25°C (Continuous Drain Current): 64A. Information: -. MSL: -. Manufacturer's marking: IRFZ48NPBF. Max drain current: 64A. Max temperature: +175°C.. Maximum dissipation Ptot [W]: 130W. Mounting Type: THT. Number of terminals: 3. Pd (Power Dissipation, Max): 130W. Polarity: MOSFET N. Power: 130W. RoHS: yes. Series: -. Switch-off delay tf[nsec.]: 34 ns. Switch-on time ton [nsec.]: 12 ns. Type of transistor: MOSFET power transistor. Original product from manufacturer: International Rectifier. Quantity in stock updated on 11/06/2025, 09:45

Technical documentation (PDF)
IRFZ48NPBF
29 parameters
Housing
TO220AB
Vdss (Drain to Source Voltage)
55V
Drain-source voltage (Vds)
55V
On-resistance Rds On
0.014 Ohms
Drain-source voltage Uds [V]
55V
Channel type
N
Ciss Gate Capacitance [pF]
1970pF
Component family
MOSFET, N-MOS
Configuration
PCB through-hole mounting
Drain current Id (A) @ 25°C
64A
Drain current through resistor Rds [Ohm] @ Ids [A]
0.014 Ohms @ 32A
Drive Voltage
10V
Gate breakdown voltage Ugs [V]
4 v
Gate/source voltage Vgs max
-20V
Id @ Tc=25°C (Continuous Drain Current)
64A
Manufacturer's marking
IRFZ48NPBF
Max drain current
64A
Max temperature
+175°C.
Maximum dissipation Ptot [W]
130W
Mounting Type
THT
Number of terminals
3
Pd (Power Dissipation, Max)
130W
Polarity
MOSFET N
Power
130W
RoHS
yes
Switch-off delay tf[nsec.]
34 ns
Switch-on time ton [nsec.]
12 ns
Type of transistor
MOSFET power transistor
Original product from manufacturer
International Rectifier