N-channel transistor IRFZ46NL, 37A, 53A, 250uA, 16.5m Ohms, TO-262 ( I2-PAK ), TO-262, 55V

N-channel transistor IRFZ46NL, 37A, 53A, 250uA, 16.5m Ohms, TO-262 ( I2-PAK ), TO-262, 55V

Quantity
Unit price
1-4
1.21$
5-49
1.00$
50-99
0.84$
100+
0.76$
Quantity in stock: 11

N-channel transistor IRFZ46NL, 37A, 53A, 250uA, 16.5m Ohms, TO-262 ( I2-PAK ), TO-262, 55V. ID (T=100°C): 37A. ID (T=25°C): 53A. Idss (max): 250uA. On-resistance Rds On: 16.5m Ohms. Housing: TO-262 ( I2-PAK ). Housing (according to data sheet): TO-262. Voltage Vds(max): 55V. Assembly/installation: surface-mounted component (SMD). C(in): 1696pF. Channel type: N. Conditioning unit: 50. Conditioning: plastic tube. Cost): 407pF. Drain-source protection: zener diode. Function: Ultra Low On-Resistance. G-S Protection: no. Gate/source voltage Vgs: 20V. IDss (min): 25uA. Id(imp): 180A. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 120W. Quantity per case: 1. RoHS: yes. Td(off): 52 ns. Td(on): 14 ns. Technology: HEXFET Power MOSFET. Trr Diode (Min.): 67 ns. Type of transistor: MOSFET. Vgs(th) min.: 2V. Original product from manufacturer: International Rectifier. Quantity in stock updated on 11/06/2025, 09:45

Technical documentation (PDF)
IRFZ46NL
31 parameters
ID (T=100°C)
37A
ID (T=25°C)
53A
Idss (max)
250uA
On-resistance Rds On
16.5m Ohms
Housing
TO-262 ( I2-PAK )
Housing (according to data sheet)
TO-262
Voltage Vds(max)
55V
Assembly/installation
surface-mounted component (SMD)
C(in)
1696pF
Channel type
N
Conditioning unit
50
Conditioning
plastic tube
Cost)
407pF
Drain-source protection
zener diode
Function
Ultra Low On-Resistance
G-S Protection
no
Gate/source voltage Vgs
20V
IDss (min)
25uA
Id(imp)
180A
Number of terminals
3
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
120W
Quantity per case
1
RoHS
yes
Td(off)
52 ns
Td(on)
14 ns
Technology
HEXFET Power MOSFET
Trr Diode (Min.)
67 ns
Type of transistor
MOSFET
Vgs(th) min.
2V
Original product from manufacturer
International Rectifier