N-channel transistor IRFZ44NPBF, TO220AB, 55V, 60V. Housing: TO220AB. Vdss (Drain to Source Voltage): 55V. Housing (JEDEC standard): -. Drain-source voltage Uds [V]: 60V. Assembly/installation: THT. Charge: 63nC. Ciss Gate Capacitance [pF]: 1470pF. Component family: MOSFET, N-MOS. Conditioning: tubus. Configuration: PCB through-hole mounting. Drain current Id (A) @ 25°C: 50A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.028 Ohms @ 31A. Drain current: 49A. Drain-source voltage: 55V. Drive Voltage: 10V. Features: -. Gate breakdown voltage Ugs [V]: 4 v. Gate-source voltage: ±20V. Gate/source voltage Vgs max: -20V. Id @ Tc=25°C (Continuous Drain Current): 49A. Information: -. MSL: -. Manufacturer's marking: IRFZ44NPBF. Max temperature: +175°C.. Maximum dissipation Ptot [W]: 150W. Mounting Type: THT. Number of terminals: 3. Pd (Power Dissipation, Max): 94W. Polarity: unipolar. Power: 94W. Rds On (Max) @ Id, Vgs: 17.5m Ohms / 25A / 10V. RoHS: yes. Series: HEXFET. Switch-off delay tf[nsec.]: 44 ns. Switch-on time ton [nsec.]: 12 ns. Technology: HEXFET®. Type of transistor: N-MOSFET, HEXFET. Original product from manufacturer: International Rectifier. Quantity in stock updated on 11/06/2025, 09:45