N-channel transistor IRFZ34N, TO-220, 20A, 29A, 250uA, 0.04 Ohms, TO-220AB, 55V. Housing: TO-220. ID (T=100°C): 20A. ID (T=25°C): 29A. Idss (max): 250uA. On-resistance Rds On: 0.04 Ohms. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 55V. Assembly/installation: PCB through-hole mounting. C(in): 700pF. Channel type: N. Charge: 22.7nC. Conditioning: tubus. Cost): 240pF. Drain current: 26A. Drain-source protection: zener diode. Drain-source voltage: 55V. Function: High-speed switching. G-S Protection: no. Gate-source voltage: 20V, ±20V. Gate/source voltage Vgs: 20V. Housing thermal resistance: 2.7K/W. IDss (min): 25uA. Id(imp): 100A. Number of terminals: 3. Operating temperature: -55...+175°C. Pd (Power Dissipation, Max): 68W. Polarity: unipolar. Power: 56W. Quantity per case: 1. RoHS: yes. Td(off): 31 ns. Td(on): 7 ns. Technology: HEXFET® Power MOSFET. Trr Diode (Min.): 57 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: International Rectifier. Quantity in stock updated on 11/06/2025, 09:45