N-channel transistor IRFZ24NPBF, TO220AB, 55V, 60V. Housing: TO220AB. Vdss (Drain to Source Voltage): 55V. Housing (JEDEC standard): -. Drain-source voltage Uds [V]: 60V. Ciss Gate Capacitance [pF]: 640pF. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Drain current Id (A) @ 25°C: 17A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.1 Ohms @ 10A. Drive Voltage: 10V. Features: -. Gate breakdown voltage Ugs [V]: 4 v. Gate/source voltage Vgs max: -20V. Id @ Tc=25°C (Continuous Drain Current): 17A. Information: -. MSL: -. Manufacturer's marking: IRFZ24NPBF. Max temperature: +175°C.. Maximum dissipation Ptot [W]: 60W. Mounting Type: THT. Number of terminals: 3. Pd (Power Dissipation, Max): 45W. Polarity: MOSFET N. RoHS: yes. Series: HEXFET. Switch-off delay tf[nsec.]: 25 ns. Switch-on time ton [nsec.]: 13 ns. Original product from manufacturer: International Rectifier. Quantity in stock updated on 11/06/2025, 09:45