N-channel transistor IRFUC20, 1.2A, 2A, 500uA, 4.4 Ohms, TO-251 ( I-Pak ), TO-251AA ( I-PAK ), 600V

N-channel transistor IRFUC20, 1.2A, 2A, 500uA, 4.4 Ohms, TO-251 ( I-Pak ), TO-251AA ( I-PAK ), 600V

Quantity
Unit price
1-4
1.08$
5-24
0.91$
25-49
0.80$
50-99
0.71$
100+
0.58$
Equivalence available
Quantity in stock: 96

N-channel transistor IRFUC20, 1.2A, 2A, 500uA, 4.4 Ohms, TO-251 ( I-Pak ), TO-251AA ( I-PAK ), 600V. ID (T=100°C): 1.2A. ID (T=25°C): 2A. Idss (max): 500uA. On-resistance Rds On: 4.4 Ohms. Housing: TO-251 ( I-Pak ). Housing (according to data sheet): TO-251AA ( I-PAK ). Voltage Vds(max): 600V. Assembly/installation: PCB through-hole mounting. C(in): 350pF. Channel type: N. Cost): 48pF. Drain-source protection: yes. Function: High-speed switching. G-S Protection: no. IDss (min): 100uA. Id(imp): 8A. Pd (Power Dissipation, Max): 42W. Quantity per case: 1. RoHS: yes. Td(off): 30 ns. Td(on): 10 ns. Technology: V-MOS. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: International Rectifier. Quantity in stock updated on 11/06/2025, 09:45

Technical documentation (PDF)
IRFUC20
26 parameters
ID (T=100°C)
1.2A
ID (T=25°C)
2A
Idss (max)
500uA
On-resistance Rds On
4.4 Ohms
Housing
TO-251 ( I-Pak )
Housing (according to data sheet)
TO-251AA ( I-PAK )
Voltage Vds(max)
600V
Assembly/installation
PCB through-hole mounting
C(in)
350pF
Channel type
N
Cost)
48pF
Drain-source protection
yes
Function
High-speed switching
G-S Protection
no
IDss (min)
100uA
Id(imp)
8A
Pd (Power Dissipation, Max)
42W
Quantity per case
1
RoHS
yes
Td(off)
30 ns
Td(on)
10 ns
Technology
V-MOS
Type of transistor
MOSFET
Vgs(th) max.
4 v
Vgs(th) min.
2V
Original product from manufacturer
International Rectifier

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