N-channel transistor IRFU420PBF, TO-251AA, 500V

N-channel transistor IRFU420PBF, TO-251AA, 500V

Quantity
Unit price
1-24
1.01$
25+
0.84$
Quantity in stock: 49

N-channel transistor IRFU420PBF, TO-251AA, 500V. Housing: TO-251AA. Housing (JEDEC standard): -. Drain-source voltage Uds [V]: 500V. Ciss Gate Capacitance [pF]: 360pF. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Drain current Id (A) @ 25°C: 2.4A. Drain current through resistor Rds [Ohm] @ Ids [A]: 3 Ohms @ 1.4A. Gate breakdown voltage Ugs [V]: 4 v. Manufacturer's marking: IRFU420PBF. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 42W. Number of terminals: 3. RoHS: yes. Switch-off delay tf[nsec.]: 33 ns. Switch-on time ton [nsec.]: 8 ns. Original product from manufacturer: Vishay (siliconix). Quantity in stock updated on 11/06/2025, 09:45

Technical documentation (PDF)
IRFU420PBF
16 parameters
Housing
TO-251AA
Drain-source voltage Uds [V]
500V
Ciss Gate Capacitance [pF]
360pF
Component family
MOSFET, N-MOS
Configuration
PCB through-hole mounting
Drain current Id (A) @ 25°C
2.4A
Drain current through resistor Rds [Ohm] @ Ids [A]
3 Ohms @ 1.4A
Gate breakdown voltage Ugs [V]
4 v
Manufacturer's marking
IRFU420PBF
Max temperature
+150°C.
Maximum dissipation Ptot [W]
42W
Number of terminals
3
RoHS
yes
Switch-off delay tf[nsec.]
33 ns
Switch-on time ton [nsec.]
8 ns
Original product from manufacturer
Vishay (siliconix)