N-channel transistor IRFU120N, TO251AA, IPAK
Quantity
Unit price
1-4
2.49$
5-9
1.55$
10-19
1.42$
20-49
1.33$
50+
1.27$
| Quantity in stock: 10 |
N-channel transistor IRFU120N, TO251AA, IPAK. Housing: TO251AA, IPAK. Assembly/installation: THT. Charge: 16.7nC. Drain current: 9.1A. Drain-source voltage: 100V. Gate-source voltage: 20V, ±20V. Housing thermal resistance: 3.2K/W. Polarity: unipolar. Power: 39W. RoHS: yes. Technology: HEXFET®. Type of transistor: N-MOSFET, HEXFET. Original product from manufacturer: Infineon (irf). Quantity in stock updated on 11/06/2025, 09:45
IRFU120N
13 parameters
Housing
TO251AA, IPAK
Assembly/installation
THT
Charge
16.7nC
Drain current
9.1A
Drain-source voltage
100V
Gate-source voltage
20V, ±20V
Housing thermal resistance
3.2K/W
Polarity
unipolar
Power
39W
RoHS
yes
Technology
HEXFET®
Type of transistor
N-MOSFET, HEXFET
Original product from manufacturer
Infineon (irf)