N-channel transistor IRFS634A, 3.7A, 5.8A, 5.8A, 0.45 Ohms, TO-220FP, TO-220F, 250V. ID (T=100°C): 3.7A. ID (T=25°C): 5.8A. Idss (max): 5.8A. On-resistance Rds On: 0.45 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 250V. Assembly/installation: PCB through-hole mounting. Channel type: N. Function: N MOSFET transistor. Id(imp): 32A. Pd (Power Dissipation, Max): 35W. Quantity per case: 1. Technology: Advanced Power MOSFET. Type of transistor: MOSFET. Original product from manufacturer: Samsung. Quantity in stock updated on 11/06/2025, 09:45