N-channel transistor IRFRC20PBF, D-PAK, TO-252, 600V
Quantity
Unit price
1-24
1.27$
25-74
1.05$
75-299
0.94$
300+
0.89$
| Quantity in stock: 200 |
N-channel transistor IRFRC20PBF, D-PAK, TO-252, 600V. Housing: D-PAK. Housing (JEDEC standard): TO-252. Drain-source voltage Uds [V]: 600V. Ciss Gate Capacitance [pF]: 350pF. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Drain current Id (A) @ 25°C: 2A. Drain current through resistor Rds [Ohm] @ Ids [A]: 4.4 Ohms @ 1.2A. Gate breakdown voltage Ugs [V]: 4 v. Manufacturer's marking: IRFRC20PBF. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 42W. Number of terminals: 3. RoHS: yes. Switch-off delay tf[nsec.]: 30 ns. Switch-on time ton [nsec.]: 10 ns. Original product from manufacturer: Vishay (ir). Quantity in stock updated on 11/06/2025, 09:45
IRFRC20PBF
17 parameters
Housing
D-PAK
Housing (JEDEC standard)
TO-252
Drain-source voltage Uds [V]
600V
Ciss Gate Capacitance [pF]
350pF
Component family
MOSFET, N-MOS
Configuration
surface-mounted component (SMD)
Drain current Id (A) @ 25°C
2A
Drain current through resistor Rds [Ohm] @ Ids [A]
4.4 Ohms @ 1.2A
Gate breakdown voltage Ugs [V]
4 v
Manufacturer's marking
IRFRC20PBF
Max temperature
+150°C.
Maximum dissipation Ptot [W]
42W
Number of terminals
3
RoHS
yes
Switch-off delay tf[nsec.]
30 ns
Switch-on time ton [nsec.]
10 ns
Original product from manufacturer
Vishay (ir)