N-channel transistor IRFR420, 1.5A, 2.4A, 0.025mA, 250uA, 3 Ohms, D-PAK TO-252AA, 500V

N-channel transistor IRFR420, 1.5A, 2.4A, 0.025mA, 250uA, 3 Ohms, D-PAK TO-252AA, 500V

Quantity
Unit price
1-4
1.05$
5-29
0.89$
30-74
0.78$
75-149
0.70$
150+
0.55$
Equivalence available
Quantity in stock: 54

N-channel transistor IRFR420, 1.5A, 2.4A, 0.025mA, 250uA, 3 Ohms, D-PAK TO-252AA, 500V. ID (T=100°C): 1.5A. ID (T=25°C): 2.4A. Idss: 0.025mA. Idss (max): 250uA. On-resistance Rds On: 3 Ohms. Housing (according to data sheet): D-PAK TO-252AA. Voltage Vds(max): 500V. Assembly/installation: surface-mounted component (SMD). Channel type: N. Drain-source protection: yes. Function: High-speed switching. G-S Protection: no. Gate/source voltage Vgs: 20V. IDss (min): 25uA. Id(imp): 8A. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 42W. Quantity per case: 1. RoHS: yes. Technology: HEXFET Power MOSFET. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: International Rectifier. Quantity in stock updated on 11/06/2025, 09:45

Technical documentation (PDF)
IRFR420
24 parameters
ID (T=100°C)
1.5A
ID (T=25°C)
2.4A
Idss
0.025mA
Idss (max)
250uA
On-resistance Rds On
3 Ohms
Housing (according to data sheet)
D-PAK TO-252AA
Voltage Vds(max)
500V
Assembly/installation
surface-mounted component (SMD)
Channel type
N
Drain-source protection
yes
Function
High-speed switching
G-S Protection
no
Gate/source voltage Vgs
20V
IDss (min)
25uA
Id(imp)
8A
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
42W
Quantity per case
1
RoHS
yes
Technology
HEXFET Power MOSFET
Type of transistor
MOSFET
Vgs(th) max.
4 v
Vgs(th) min.
2V
Original product from manufacturer
International Rectifier

Equivalent products and/or accessories for IRFR420