N-channel transistor IRFR4105, 19A, 27A, 0.025mA, 27A, 0.045 Ohms, D-PAK TO-252AA, 55V

N-channel transistor IRFR4105, 19A, 27A, 0.025mA, 27A, 0.045 Ohms, D-PAK TO-252AA, 55V

Quantity
Unit price
1-4
1.09$
5-49
0.90$
50-99
0.76$
100+
0.69$
Quantity in stock: 4

N-channel transistor IRFR4105, 19A, 27A, 0.025mA, 27A, 0.045 Ohms, D-PAK TO-252AA, 55V. ID (T=100°C): 19A. ID (T=25°C): 27A. Idss: 0.025mA. Idss (max): 27A. On-resistance Rds On: 0.045 Ohms. Housing (according to data sheet): D-PAK TO-252AA. Voltage Vds(max): 55V. Assembly/installation: surface-mounted component (SMD). Channel type: N. Function: td(on) 7ns. Id(imp): 100A. Pd (Power Dissipation, Max): 68W. Quantity per case: 1. RoHS: yes. Technology: HEXFET Power MOSFET. Type of transistor: MOSFET. Original product from manufacturer: International Rectifier. Quantity in stock updated on 11/06/2025, 09:45

Technical documentation (PDF)
IRFR4105
17 parameters
ID (T=100°C)
19A
ID (T=25°C)
27A
Idss
0.025mA
Idss (max)
27A
On-resistance Rds On
0.045 Ohms
Housing (according to data sheet)
D-PAK TO-252AA
Voltage Vds(max)
55V
Assembly/installation
surface-mounted component (SMD)
Channel type
N
Function
td(on) 7ns
Id(imp)
100A
Pd (Power Dissipation, Max)
68W
Quantity per case
1
RoHS
yes
Technology
HEXFET Power MOSFET
Type of transistor
MOSFET
Original product from manufacturer
International Rectifier