N-channel transistor IRFR3709Z, 61A, 86A, 150uA, 5.2m Ohms, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 30 v

N-channel transistor IRFR3709Z, 61A, 86A, 150uA, 5.2m Ohms, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 30 v

Quantity
Unit price
1-4
1.16$
5-49
0.98$
50-99
0.86$
100-199
0.77$
200+
0.63$
Quantity in stock: 78

N-channel transistor IRFR3709Z, 61A, 86A, 150uA, 5.2m Ohms, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 30 v. ID (T=100°C): 61A. ID (T=25°C): 86A. Idss (max): 150uA. On-resistance Rds On: 5.2m Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252AA ( DPAK ) ( SOT428 ). Voltage Vds(max): 30 v. Assembly/installation: surface-mounted component (SMD). C(in): 2330pF. Channel type: N. Cost): 460pF. Drain-source protection: yes. Function: Ultra Low On-Resistance, Ultra-Low Gate Impedance. G-S Protection: no. Gate/source voltage Vgs: 20V. IDss (min): 1uA. Id(imp): 340A. Number of terminals: 2. Operating temperature: -55...+175°C. Pd (Power Dissipation, Max): 79W. Quantity per case: 1. RoHS: yes. Spec info: AUTOMOTIVE MOSFET. Td(off): 15 ns. Td(on): 12 ns. Technology: HEXFET® Power MOSFET. Trr Diode (Min.): 29 ns. Type of transistor: MOSFET. Vgs(th) max.: 2.25V. Vgs(th) min.: 1.35V. Original product from manufacturer: International Rectifier. Quantity in stock updated on 11/06/2025, 09:45

Technical documentation (PDF)
IRFR3709Z
31 parameters
ID (T=100°C)
61A
ID (T=25°C)
86A
Idss (max)
150uA
On-resistance Rds On
5.2m Ohms
Housing
D-PAK ( TO-252 )
Housing (according to data sheet)
TO-252AA ( DPAK ) ( SOT428 )
Voltage Vds(max)
30 v
Assembly/installation
surface-mounted component (SMD)
C(in)
2330pF
Channel type
N
Cost)
460pF
Drain-source protection
yes
Function
Ultra Low On-Resistance, Ultra-Low Gate Impedance
G-S Protection
no
Gate/source voltage Vgs
20V
IDss (min)
1uA
Id(imp)
340A
Number of terminals
2
Operating temperature
-55...+175°C
Pd (Power Dissipation, Max)
79W
Quantity per case
1
RoHS
yes
Spec info
AUTOMOTIVE MOSFET
Td(off)
15 ns
Td(on)
12 ns
Technology
HEXFET® Power MOSFET
Trr Diode (Min.)
29 ns
Type of transistor
MOSFET
Vgs(th) max.
2.25V
Vgs(th) min.
1.35V
Original product from manufacturer
International Rectifier