N-channel transistor IRFR110PBF, D-PAK, TO-252, 100V. Housing: D-PAK. Housing (JEDEC standard): TO-252. Drain-source voltage Uds [V]: 100V. Ciss Gate Capacitance [pF]: 180pF. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Drain current Id (A) @ 25°C: 4.3A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.54 Ohms @ 2.6A. Gate breakdown voltage Ugs [V]: 4 v. Manufacturer's marking: IRFR110PBF. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 2.5W. Number of terminals: 3. RoHS: yes. Switch-off delay tf[nsec.]: 15 ns. Switch-on time ton [nsec.]: 6.9ns. Original product from manufacturer: Vishay (ir). Quantity in stock updated on 11/06/2025, 09:45