N-channel transistor IRFR110, 2.7A, 4.3A, 250uA, 0.54 Ohms, D-PAK ( TO-252 ), D-PAK TO-252AA, 100V

N-channel transistor IRFR110, 2.7A, 4.3A, 250uA, 0.54 Ohms, D-PAK ( TO-252 ), D-PAK TO-252AA, 100V

Quantity
Unit price
1-4
0.76$
5-49
0.65$
50-99
0.56$
100-199
0.50$
200+
0.42$
Quantity in stock: 118

N-channel transistor IRFR110, 2.7A, 4.3A, 250uA, 0.54 Ohms, D-PAK ( TO-252 ), D-PAK TO-252AA, 100V. ID (T=100°C): 2.7A. ID (T=25°C): 4.3A. Idss (max): 250uA. On-resistance Rds On: 0.54 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): D-PAK TO-252AA. Voltage Vds(max): 100V. Assembly/installation: surface-mounted component (SMD). C(in): 180pF. Channel type: N. Cost): 80pF. Drain-source protection: yes. Function: High-speed switching. G-S Protection: no. Gate/source voltage Vgs: 20V. IDss (min): 25uA. Id(imp): 17A. Pd (Power Dissipation, Max): 25W. Quantity per case: 1. RoHS: yes. Td(off): 15 ns. Td(on): 6.9ns. Technology: HEXFET Power MOSFET. Trr Diode (Min.): 100 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: International Rectifier. Quantity in stock updated on 11/06/2025, 09:45

Technical documentation (PDF)
IRFR110
28 parameters
ID (T=100°C)
2.7A
ID (T=25°C)
4.3A
Idss (max)
250uA
On-resistance Rds On
0.54 Ohms
Housing
D-PAK ( TO-252 )
Housing (according to data sheet)
D-PAK TO-252AA
Voltage Vds(max)
100V
Assembly/installation
surface-mounted component (SMD)
C(in)
180pF
Channel type
N
Cost)
80pF
Drain-source protection
yes
Function
High-speed switching
G-S Protection
no
Gate/source voltage Vgs
20V
IDss (min)
25uA
Id(imp)
17A
Pd (Power Dissipation, Max)
25W
Quantity per case
1
RoHS
yes
Td(off)
15 ns
Td(on)
6.9ns
Technology
HEXFET Power MOSFET
Trr Diode (Min.)
100 ns
Type of transistor
MOSFET
Vgs(th) max.
4 v
Vgs(th) min.
2V
Original product from manufacturer
International Rectifier