N-channel transistor IRFPF50, 4.2A, 6.7A, 500uA, 1.6 Ohms, TO-247, TO-247AC, 900V

N-channel transistor IRFPF50, 4.2A, 6.7A, 500uA, 1.6 Ohms, TO-247, TO-247AC, 900V

Quantity
Unit price
1-4
5.03$
5-11
4.45$
12-24
4.12$
25+
3.78$
Quantity in stock: 63

N-channel transistor IRFPF50, 4.2A, 6.7A, 500uA, 1.6 Ohms, TO-247, TO-247AC, 900V. ID (T=100°C): 4.2A. ID (T=25°C): 6.7A. Idss (max): 500uA. On-resistance Rds On: 1.6 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 900V. Assembly/installation: PCB through-hole mounting. C(in): 2900pF. Channel type: N. Cost): 270pF. Drain-source protection: zener diode. Function: High-speed switching. G-S Protection: no. Gate/source voltage Vgs: 20V. IDss (min): 100uA. Id(imp): 27A. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 190W. Quantity per case: 1. RoHS: yes. Td(off): 130 ns. Td(on): 20 ns. Technology: HEXFET Power MOSFET. Trr Diode (Min.): 610 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: International Rectifier. Quantity in stock updated on 11/06/2025, 09:45

Technical documentation (PDF)
IRFPF50
30 parameters
ID (T=100°C)
4.2A
ID (T=25°C)
6.7A
Idss (max)
500uA
On-resistance Rds On
1.6 Ohms
Housing
TO-247
Housing (according to data sheet)
TO-247AC
Voltage Vds(max)
900V
Assembly/installation
PCB through-hole mounting
C(in)
2900pF
Channel type
N
Cost)
270pF
Drain-source protection
zener diode
Function
High-speed switching
G-S Protection
no
Gate/source voltage Vgs
20V
IDss (min)
100uA
Id(imp)
27A
Number of terminals
3
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
190W
Quantity per case
1
RoHS
yes
Td(off)
130 ns
Td(on)
20 ns
Technology
HEXFET Power MOSFET
Trr Diode (Min.)
610 ns
Type of transistor
MOSFET
Vgs(th) max.
4 v
Vgs(th) min.
2V
Original product from manufacturer
International Rectifier