N-channel transistor IRFPE50, 4.7A, 7.8A, 500uA, 1.2 Ohms, TO-247, TO-247AC, 800V. ID (T=100°C): 4.7A. ID (T=25°C): 7.8A. Idss (max): 500uA. On-resistance Rds On: 1.2 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 800V. Assembly/installation: PCB through-hole mounting. C(in): 3100pF. Channel type: N. Cost): 800pF. Drain-source protection: yes. Function: High-speed switching. G-S Protection: no. Gate/source voltage Vgs: 20V. IDss (min): 100uA. Id(imp): 31A. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 190W. Quantity per case: 1. Td(off): 120ns. Td(on): 19 ns. Technology: HEXFET Power MOSFET. Trr Diode (Min.): 650 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: International Rectifier. Quantity in stock updated on 11/06/2025, 09:45