N-channel transistor IRFP90N20DPBF, TO-247AC, 200V, 0.02, 200V. Housing: TO-247AC. Drain-source voltage (Vds): 200V. Housing (JEDEC standard): -. On-resistance Rds On: 0.02. Drain-source voltage Uds [V]: 200V. Assembly/installation: THT. Channel type: N. Charge: 180nC. Ciss Gate Capacitance [pF]: 640pF. Component family: MOSFET, N-MOS. Conditioning: tubus. Configuration: PCB through-hole mounting. Drain current Id (A) @ 25°C: 94A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.023 Ohms @ 56A. Drain current: 94A. Drain-source voltage: 200V. Gate breakdown voltage Ugs [V]: 5V. Gate-source voltage: ±30V. Manufacturer's marking: IRFP90N20DPBF. Max drain current: 94A. Max temperature: +175°C.. Maximum dissipation Ptot [W]: 580W. Number of terminals: 3. Polarity: unipolar. Power: 580W. RoHS: yes. Switch-off delay tf[nsec.]: 43 ns. Switch-on time ton [nsec.]: 23 ns. Technology: HEXFET®. Type of transistor: N-MOSFET. Original product from manufacturer: International Rectifier. Quantity in stock updated on 11/06/2025, 09:45