N-channel transistor IRFP90N20D, 66A, 94A, 250uA, 0.023 Ohms, TO-247, TO-247AC, 200V

N-channel transistor IRFP90N20D, 66A, 94A, 250uA, 0.023 Ohms, TO-247, TO-247AC, 200V

Quantity
Unit price
1-4
7.55$
5-9
6.81$
10-24
6.26$
25-49
5.85$
50+
5.23$
Quantity in stock: 45

N-channel transistor IRFP90N20D, 66A, 94A, 250uA, 0.023 Ohms, TO-247, TO-247AC, 200V. ID (T=100°C): 66A. ID (T=25°C): 94A. Idss (max): 250uA. On-resistance Rds On: 0.023 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 200V. Assembly/installation: PCB through-hole mounting. C(in): 1070pF. Channel type: N. Cost): 6040pF. Drain-source protection: yes. Function: High frequency DC-DC converts. G-S Protection: no. Gate/source voltage Vgs: 30 v. IDss (min): 25uA. Id(imp): 380A. Operating temperature: -55...+175°C. Pd (Power Dissipation, Max): 580W. Quantity per case: 1. Td(off): 43 ns. Td(on): 23 ns. Technology: HEXFET Power MOSFET. Type of transistor: MOSFET. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Original product from manufacturer: Infineon Technologies. Quantity in stock updated on 11/06/2025, 09:45

Technical documentation (PDF)
IRFP90N20D
27 parameters
ID (T=100°C)
66A
ID (T=25°C)
94A
Idss (max)
250uA
On-resistance Rds On
0.023 Ohms
Housing
TO-247
Housing (according to data sheet)
TO-247AC
Voltage Vds(max)
200V
Assembly/installation
PCB through-hole mounting
C(in)
1070pF
Channel type
N
Cost)
6040pF
Drain-source protection
yes
Function
High frequency DC-DC converts
G-S Protection
no
Gate/source voltage Vgs
30 v
IDss (min)
25uA
Id(imp)
380A
Operating temperature
-55...+175°C
Pd (Power Dissipation, Max)
580W
Quantity per case
1
Td(off)
43 ns
Td(on)
23 ns
Technology
HEXFET Power MOSFET
Type of transistor
MOSFET
Vgs(th) max.
5V
Vgs(th) min.
3V
Original product from manufacturer
Infineon Technologies