N-channel transistor IRFP4710, 51A, 72A, 250uA, 72A, 0.011 Ohms, TO-247, TO-247AC, 100V

N-channel transistor IRFP4710, 51A, 72A, 250uA, 72A, 0.011 Ohms, TO-247, TO-247AC, 100V

Quantity
Unit price
1-4
4.49$
5-24
4.09$
25-49
3.77$
50-99
3.49$
100+
3.12$
Quantity in stock: 19

N-channel transistor IRFP4710, 51A, 72A, 250uA, 72A, 0.011 Ohms, TO-247, TO-247AC, 100V. ID (T=100°C): 51A. ID (T=25°C): 72A. Idss: 250uA. Idss (max): 72A. On-resistance Rds On: 0.011 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 100V. C(in): 6160pF. Channel type: N. Cost): 440pF. Drain-source protection: yes. Function: Power-MOSFET. G-S Protection: no. Gate/source voltage (off) min.: 3.5V. Gate/source voltage Vgs: 20V. IDss (min): 0.1uA. Id(imp): 300A. Note: High Frequency. Pd (Power Dissipation, Max): 190W. Quantity per case: 1. Td(off): 41 ns. Td(on): 35 ns. Technology: HEXFET® Power MOSFET. Type of transistor: MOSFET. Vgs(th) max.: 5.5V. Original product from manufacturer: International Rectifier. Quantity in stock updated on 11/06/2025, 09:45

Technical documentation (PDF)
IRFP4710
27 parameters
ID (T=100°C)
51A
ID (T=25°C)
72A
Idss
250uA
Idss (max)
72A
On-resistance Rds On
0.011 Ohms
Housing
TO-247
Housing (according to data sheet)
TO-247AC
Voltage Vds(max)
100V
C(in)
6160pF
Channel type
N
Cost)
440pF
Drain-source protection
yes
Function
Power-MOSFET
G-S Protection
no
Gate/source voltage (off) min.
3.5V
Gate/source voltage Vgs
20V
IDss (min)
0.1uA
Id(imp)
300A
Note
High Frequency
Pd (Power Dissipation, Max)
190W
Quantity per case
1
Td(off)
41 ns
Td(on)
35 ns
Technology
HEXFET® Power MOSFET
Type of transistor
MOSFET
Vgs(th) max.
5.5V
Original product from manufacturer
International Rectifier