N-channel transistor IRFP4227, 46A, 65A, 1mA, 0.021 Ohms, TO-247, TO-247AC, 200V

N-channel transistor IRFP4227, 46A, 65A, 1mA, 0.021 Ohms, TO-247, TO-247AC, 200V

Quantity
Unit price
1-4
5.05$
5-9
4.44$
10-24
4.04$
25-49
3.78$
50+
3.36$
Quantity in stock: 37

N-channel transistor IRFP4227, 46A, 65A, 1mA, 0.021 Ohms, TO-247, TO-247AC, 200V. ID (T=100°C): 46A. ID (T=25°C): 65A. Idss (max): 1mA. On-resistance Rds On: 0.021 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 200V. Assembly/installation: PCB through-hole mounting. C(in): 4600pF. Channel type: N. Conditioning unit: 25. Conditioning: plastic tube. Cost): 460pF. Drain-source protection: yes. Function: PDP MOSFET. G-S Protection: no. Gate/source voltage Vgs: 30 v. IDss (min): 20uA. Id(imp): 260A. Number of terminals: 3. Operating temperature: -40...+175°C. Pd (Power Dissipation, Max): 330W. Quantity per case: 1. RoHS: yes. Td(off): 21 ns. Td(on): 33 ns. Technology: HEXFET Power-MOSFET, PDP SWITCH. Temperature: +175°C. Trr Diode (Min.): 100 ns. Type of transistor: MOSFET. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Original product from manufacturer: International Rectifier. Quantity in stock updated on 10/31/2025, 09:37

Technical documentation (PDF)
IRFP4227
33 parameters
ID (T=100°C)
46A
ID (T=25°C)
65A
Idss (max)
1mA
On-resistance Rds On
0.021 Ohms
Housing
TO-247
Housing (according to data sheet)
TO-247AC
Voltage Vds(max)
200V
Assembly/installation
PCB through-hole mounting
C(in)
4600pF
Channel type
N
Conditioning unit
25
Conditioning
plastic tube
Cost)
460pF
Drain-source protection
yes
Function
PDP MOSFET
G-S Protection
no
Gate/source voltage Vgs
30 v
IDss (min)
20uA
Id(imp)
260A
Number of terminals
3
Operating temperature
-40...+175°C
Pd (Power Dissipation, Max)
330W
Quantity per case
1
RoHS
yes
Td(off)
21 ns
Td(on)
33 ns
Technology
HEXFET Power-MOSFET, PDP SWITCH
Temperature
+175°C
Trr Diode (Min.)
100 ns
Type of transistor
MOSFET
Vgs(th) max.
5V
Vgs(th) min.
3V
Original product from manufacturer
International Rectifier