N-channel transistor IRFP3710PBF, TO-247AC, 100V, 0.028 Ohms, 100V

N-channel transistor IRFP3710PBF, TO-247AC, 100V, 0.028 Ohms, 100V

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Quantity in stock: 149

N-channel transistor IRFP3710PBF, TO-247AC, 100V, 0.028 Ohms, 100V. Housing: TO-247AC. Drain-source voltage (Vds): 100V. Housing (JEDEC standard): -. On-resistance Rds On: 0.028 Ohms. Drain-source voltage Uds [V]: 100V. Channel type: N. Ciss Gate Capacitance [pF]: 3000pF. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Drain current Id (A) @ 25°C: 40A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.025 Ohms @ 28A. Gate breakdown voltage Ugs [V]: 4 v. Manufacturer's marking: IRFP3710PBF. Max drain current: 51A. Max temperature: +175°C.. Maximum dissipation Ptot [W]: 200W. Number of terminals: 3. Power: 180W. RoHS: yes. Switch-off delay tf[nsec.]: 58 ns. Switch-on time ton [nsec.]: 14 ns. Type of transistor: MOSFET power transistor. Original product from manufacturer: International Rectifier. Quantity in stock updated on 11/06/2025, 22:14

Technical documentation (PDF)
IRFP3710PBF
22 parameters
Housing
TO-247AC
Drain-source voltage (Vds)
100V
On-resistance Rds On
0.028 Ohms
Drain-source voltage Uds [V]
100V
Channel type
N
Ciss Gate Capacitance [pF]
3000pF
Component family
MOSFET, N-MOS
Configuration
PCB through-hole mounting
Drain current Id (A) @ 25°C
40A
Drain current through resistor Rds [Ohm] @ Ids [A]
0.025 Ohms @ 28A
Gate breakdown voltage Ugs [V]
4 v
Manufacturer's marking
IRFP3710PBF
Max drain current
51A
Max temperature
+175°C.
Maximum dissipation Ptot [W]
200W
Number of terminals
3
Power
180W
RoHS
yes
Switch-off delay tf[nsec.]
58 ns
Switch-on time ton [nsec.]
14 ns
Type of transistor
MOSFET power transistor
Original product from manufacturer
International Rectifier