N-channel transistor IRFP3710, 40A, 57A, 250uA, 0.026 Ohms, TO-247, TO-247AC, 100V

N-channel transistor IRFP3710, 40A, 57A, 250uA, 0.026 Ohms, TO-247, TO-247AC, 100V

Quantity
Unit price
1-4
2.98$
5-24
2.53$
25-49
2.20$
50-74
1.97$
75+
1.72$
Equivalence available
Quantity in stock: 11

N-channel transistor IRFP3710, 40A, 57A, 250uA, 0.026 Ohms, TO-247, TO-247AC, 100V. ID (T=100°C): 40A. ID (T=25°C): 57A. Idss (max): 250uA. On-resistance Rds On: 0.026 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 100V. Assembly/installation: PCB through-hole mounting. C(in): 3000pF. Channel type: N. Cost): 640pF. Drain-source protection: yes. Function: High-speed switching. G-S Protection: no. Gate/source voltage Vgs: 20V. IDss (min): 25uA. Id(imp): 180A. Operating temperature: -55...+175°C. Pd (Power Dissipation, Max): 200W. Quantity per case: 1. Td(off): 58 ns. Td(on): 14 ns. Technology: HEXFET Power MOSFET. Trr Diode (Min.): 210 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: International Rectifier. Quantity in stock updated on 11/06/2025, 22:14

Technical documentation (PDF)
IRFP3710
28 parameters
ID (T=100°C)
40A
ID (T=25°C)
57A
Idss (max)
250uA
On-resistance Rds On
0.026 Ohms
Housing
TO-247
Housing (according to data sheet)
TO-247AC
Voltage Vds(max)
100V
Assembly/installation
PCB through-hole mounting
C(in)
3000pF
Channel type
N
Cost)
640pF
Drain-source protection
yes
Function
High-speed switching
G-S Protection
no
Gate/source voltage Vgs
20V
IDss (min)
25uA
Id(imp)
180A
Operating temperature
-55...+175°C
Pd (Power Dissipation, Max)
200W
Quantity per case
1
Td(off)
58 ns
Td(on)
14 ns
Technology
HEXFET Power MOSFET
Trr Diode (Min.)
210 ns
Type of transistor
MOSFET
Vgs(th) max.
4 v
Vgs(th) min.
2V
Original product from manufacturer
International Rectifier

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