N-channel transistor IRFP360PBF, 400V, 0.20 Ohms, 400V. Drain-source voltage (Vds): 400V. Housing (JEDEC standard): -. On-resistance Rds On: 0.20 Ohms. Drain-source voltage Uds [V]: 400V. Channel type: N. Ciss Gate Capacitance [pF]: 4500pF. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Drain current Id (A) @ 25°C: 23A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.2 Ohms @ 14A. Gate breakdown voltage Ugs [V]: 4 v. Manufacturer's marking: IRFP360PBF. Max drain current: 23A. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 280W. Number of terminals: 3. Power: 280W. RoHS: yes. Switch-off delay tf[nsec.]: 100 ns. Switch-on time ton [nsec.]: 18 ns. Type of transistor: MOSFET power transistor. Original product from manufacturer: Vishay (siliconix). Quantity in stock updated on 11/06/2025, 22:14