N-channel transistor IRFP350, 9.6A, 16A, 250uA, 0.3 Ohms, TO-247, TO-247AC, 400V

N-channel transistor IRFP350, 9.6A, 16A, 250uA, 0.3 Ohms, TO-247, TO-247AC, 400V

Quantity
Unit price
1-4
4.16$
5-9
3.65$
10-24
3.32$
25-49
3.07$
50+
2.73$
Quantity in stock: 19

N-channel transistor IRFP350, 9.6A, 16A, 250uA, 0.3 Ohms, TO-247, TO-247AC, 400V. ID (T=100°C): 9.6A. ID (T=25°C): 16A. Idss (max): 250uA. On-resistance Rds On: 0.3 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 400V. Assembly/installation: PCB through-hole mounting. C(in): 2600pF. Channel type: N. Cost): 660pF. Drain-source protection: yes. Function: N MOSFET transistor. G-S Protection: no. Gate/source voltage Vgs: 20V. IDss (min): 25uA. Operating temperature: -50...+150°C. Pd (Power Dissipation, Max): 190W. Quantity per case: 1. Td(off): 87 ns. Td(on): 16 ns. Technology: HEXFET Power MOSFET. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: International Rectifier. Quantity in stock updated on 11/06/2025, 22:14

Technical documentation (PDF)
IRFP350
26 parameters
ID (T=100°C)
9.6A
ID (T=25°C)
16A
Idss (max)
250uA
On-resistance Rds On
0.3 Ohms
Housing
TO-247
Housing (according to data sheet)
TO-247AC
Voltage Vds(max)
400V
Assembly/installation
PCB through-hole mounting
C(in)
2600pF
Channel type
N
Cost)
660pF
Drain-source protection
yes
Function
N MOSFET transistor
G-S Protection
no
Gate/source voltage Vgs
20V
IDss (min)
25uA
Operating temperature
-50...+150°C
Pd (Power Dissipation, Max)
190W
Quantity per case
1
Td(off)
87 ns
Td(on)
16 ns
Technology
HEXFET Power MOSFET
Type of transistor
MOSFET
Vgs(th) max.
4 v
Vgs(th) min.
2V
Original product from manufacturer
International Rectifier