N-channel transistor IRFP260N, 35A, 50A, 250uA, 0.04 Ohms, TO-247, TO-247AC, 200V

N-channel transistor IRFP260N, 35A, 50A, 250uA, 0.04 Ohms, TO-247, TO-247AC, 200V

Quantity
Unit price
1-4
4.54$
5-24
4.02$
25-49
3.64$
50-99
3.31$
100+
2.91$
Quantity in stock: 121

N-channel transistor IRFP260N, 35A, 50A, 250uA, 0.04 Ohms, TO-247, TO-247AC, 200V. ID (T=100°C): 35A. ID (T=25°C): 50A. Idss (max): 250uA. On-resistance Rds On: 0.04 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 200V. Assembly/installation: PCB through-hole mounting. C(in): 4057pF. Channel type: N. Cost): 603pF. Drain-source protection: yes. Function: dynamic dv/dt ratio, fast switching. G-S Protection: no. Gate/source voltage Vgs: 20V. IDss (min): 25uA. Id(imp): 200A. Number of terminals: 3. Operating temperature: -55...+175°C. Pd (Power Dissipation, Max): 300W. Quantity per case: 1. RoHS: yes. Td(off): 55 ns. Td(on): 17 ns. Technology: HEXFET Power MOSFET. Trr Diode (Min.): 268 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Weight: 5.57g. Original product from manufacturer: International Rectifier. Quantity in stock updated on 11/06/2025, 22:14

Technical documentation (PDF)
IRFP260N
31 parameters
ID (T=100°C)
35A
ID (T=25°C)
50A
Idss (max)
250uA
On-resistance Rds On
0.04 Ohms
Housing
TO-247
Housing (according to data sheet)
TO-247AC
Voltage Vds(max)
200V
Assembly/installation
PCB through-hole mounting
C(in)
4057pF
Channel type
N
Cost)
603pF
Drain-source protection
yes
Function
dynamic dv/dt ratio, fast switching
G-S Protection
no
Gate/source voltage Vgs
20V
IDss (min)
25uA
Id(imp)
200A
Number of terminals
3
Operating temperature
-55...+175°C
Pd (Power Dissipation, Max)
300W
Quantity per case
1
RoHS
yes
Td(off)
55 ns
Td(on)
17 ns
Technology
HEXFET Power MOSFET
Trr Diode (Min.)
268 ns
Type of transistor
MOSFET
Vgs(th) max.
4 v
Vgs(th) min.
2V
Weight
5.57g
Original product from manufacturer
International Rectifier