N-channel transistor IRFP250, TO247, TO247AC
Quantity
Unit price
1-4
3.85$
5-9
2.73$
10-19
2.56$
20-49
2.45$
50+
2.35$
| Quantity in stock: 25 |
N-channel transistor IRFP250, TO247, TO247AC. Housing: TO247, TO247AC. Assembly/installation: THT. Charge: 82nC, 123nC. Conditioning: tubus. Drain current: 30A. Drain-source voltage: 200V. Gate-source voltage: 20V, ±20V. Housing thermal resistance: 700mK/W. Polarity: unipolar. Power: 214W. RoHS: yes. Technology: HEXFET®. Type of transistor: N-MOSFET, HEXFET. Original product from manufacturer: Infineon (irf). Quantity in stock updated on 12/21/2025, 19:02
IRFP250
14 parameters
Housing
TO247, TO247AC
Assembly/installation
THT
Charge
82nC, 123nC
Conditioning
tubus
Drain current
30A
Drain-source voltage
200V
Gate-source voltage
20V, ±20V
Housing thermal resistance
700mK/W
Polarity
unipolar
Power
214W
RoHS
yes
Technology
HEXFET®
Type of transistor
N-MOSFET, HEXFET
Original product from manufacturer
Infineon (irf)