N-channel transistor IRFP250, TO247, TO247AC
Quantity
Unit price
1-4
2.92$
5-9
1.85$
10-19
1.70$
20-49
1.61$
50+
1.53$
| Quantity in stock: 10 |
N-channel transistor IRFP250, TO247, TO247AC. Housing: TO247, TO247AC. Assembly/installation: THT. Charge: 82nC, 123nC. Conditioning: tubus. Drain current: 30A. Drain-source voltage: 200V. Gate-source voltage: 20V, ±20V. Housing thermal resistance: 700mK/W. Polarity: unipolar. Power: 214W. RoHS: yes. Technology: HEXFET®. Type of transistor: N-MOSFET, HEXFET. Original product from manufacturer: Infineon (irf). Quantity in stock updated on 11/06/2025, 22:14
IRFP250
14 parameters
Housing
TO247, TO247AC
Assembly/installation
THT
Charge
82nC, 123nC
Conditioning
tubus
Drain current
30A
Drain-source voltage
200V
Gate-source voltage
20V, ±20V
Housing thermal resistance
700mK/W
Polarity
unipolar
Power
214W
RoHS
yes
Technology
HEXFET®
Type of transistor
N-MOSFET, HEXFET
Original product from manufacturer
Infineon (irf)