N-channel transistor IRFP150N, TO-247, 30A, 42A, 250uA, 0.36 Ohms, TO-247AC, 100V. Housing: TO-247. ID (T=100°C): 30A. ID (T=25°C): 42A. Idss (max): 250uA. On-resistance Rds On: 0.36 Ohms. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 100V. Assembly/installation: PCB through-hole mounting. C(in): 1900pF. Channel type: N. Charge: 73.3nC, 110nC. Conditioning unit: 30. Conditioning: tubus. Cost): 450pF. Drain current: 30A, 39A. Drain-source protection: zener diode. Drain-source voltage: 100V. Function: High-speed switching. G-S Protection: no. Gate-source voltage: 20V, ±20V. Gate/source voltage Vgs: 20V. Housing thermal resistance: 1.1K/W. IDss (min): 25uA. Id(imp): 140A. Number of terminals: 3. Operating temperature: -55...+175°C. Pd (Power Dissipation, Max): 160W. Polarity: unipolar. Power: 160W. Quantity per case: 1. RoHS: yes. Td(off): 45 ns. Td(on): 11 ns. Technology: HEXFET® Power MOSFET. Trr Diode (Min.): 180 ns. Type of transistor: MOSFET. Vgs(th) min.: 2V. Original product from manufacturer: International Rectifier. Quantity in stock updated on 11/06/2025, 22:14