N-channel transistor IRFP064N, TO-247, 59A, 110A, 250uA, 0.008 Ohms, TO-247AC, 55V

N-channel transistor IRFP064N, TO-247, 59A, 110A, 250uA, 0.008 Ohms, TO-247AC, 55V

Quantity
Unit price
1-4
4.02$
5-9
3.75$
10-24
3.53$
25-49
3.33$
50+
3.03$
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Quantity in stock: 105

N-channel transistor IRFP064N, TO-247, 59A, 110A, 250uA, 0.008 Ohms, TO-247AC, 55V. Housing: TO-247. ID (T=100°C): 59A. ID (T=25°C): 110A. Idss (max): 250uA. On-resistance Rds On: 0.008 Ohms. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 55V. Assembly/installation: PCB through-hole mounting. C(in): 4000pF. Channel type: N. Charge: 113.3nC. Conditioning unit: 25. Conditioning: tubus. Cost): 1300pF. Drain current: 98A. Drain-source protection: yes. Drain-source voltage: 55V. Function: High-speed switching. G-S Protection: no. Gate-source voltage: 20V, ±20V. Gate/source voltage Vgs: 20V. Housing thermal resistance: 1K/W. IDss (min): 25uA. Id(imp): 390A. Number of terminals: 3. Operating temperature: -55...+175°C. Pd (Power Dissipation, Max): 200W. Polarity: unipolar. Power: 150W. Quantity per case: 1. RoHS: yes. Spec info: Ultra Low On-Resistance. Td(off): 43 ns. Td(on): 14 ns. Technology: HEXFET Power MOSFET. Trr Diode (Min.): 110 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: International Rectifier. Quantity in stock updated on 11/06/2025, 22:14

Technical documentation (PDF)
IRFP064N
40 parameters
Housing
TO-247
ID (T=100°C)
59A
ID (T=25°C)
110A
Idss (max)
250uA
On-resistance Rds On
0.008 Ohms
Housing (according to data sheet)
TO-247AC
Voltage Vds(max)
55V
Assembly/installation
PCB through-hole mounting
C(in)
4000pF
Channel type
N
Charge
113.3nC
Conditioning unit
25
Conditioning
tubus
Cost)
1300pF
Drain current
98A
Drain-source protection
yes
Drain-source voltage
55V
Function
High-speed switching
G-S Protection
no
Gate-source voltage
20V, ±20V
Gate/source voltage Vgs
20V
Housing thermal resistance
1K/W
IDss (min)
25uA
Id(imp)
390A
Number of terminals
3
Operating temperature
-55...+175°C
Pd (Power Dissipation, Max)
200W
Polarity
unipolar
Power
150W
Quantity per case
1
RoHS
yes
Spec info
Ultra Low On-Resistance
Td(off)
43 ns
Td(on)
14 ns
Technology
HEXFET Power MOSFET
Trr Diode (Min.)
110 ns
Type of transistor
MOSFET
Vgs(th) max.
4 v
Vgs(th) min.
2V
Original product from manufacturer
International Rectifier