N-channel transistor IRFP044N, TO-247, 55V, 37A, 53A, 25uA, 250uA, 0.02 Ohms, TO-247AC, 55V

N-channel transistor IRFP044N, TO-247, 55V, 37A, 53A, 25uA, 250uA, 0.02 Ohms, TO-247AC, 55V

Quantity
Unit price
1-4
2.29$
5-24
2.15$
25-49
2.04$
50+
1.50$
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Equivalence available
Quantity in stock: 98

N-channel transistor IRFP044N, TO-247, 55V, 37A, 53A, 25uA, 250uA, 0.02 Ohms, TO-247AC, 55V. Housing: TO-247. Housing (JEDEC standard): -. Drain-source voltage Uds [V]: 55V. ID (T=100°C): 37A. ID (T=25°C): 53A. Idss: 25uA. Idss (max): 250uA. On-resistance Rds On: 0.02 Ohms. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 55V. Assembly/installation: PCB through-hole mounting. C(in): 1500pF. Channel type: N. Ciss Gate Capacitance [pF]: 1500pF. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Cost): 450pF. Drain current Id (A) @ 25°C: 53A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.02 Ohms @ 29A. Drain-source protection: zener diode. Function: PowerMOSFET. G-S Protection: no. Gate breakdown voltage Ugs [V]: 4 v. Id(imp): 180A. Manufacturer's marking: IRFP044N. Max temperature: +175°C.. Maximum dissipation Ptot [W]: 120W. Number of terminals: 3. Number of terminals: 3. Pd (Power Dissipation, Max): 120W. Quantity per case: 1. RoHS: yes. Switch-off delay tf[nsec.]: 43 ns. Switch-on time ton [nsec.]: 12 ns. Td(off): 43 ns. Td(on): 12 ns. Technology: HEXFET. Trr Diode (Min.): 72 ns. Type of transistor: MOSFET. Original product from manufacturer: International Rectifier. Quantity in stock updated on 11/06/2025, 22:14

Technical documentation (PDF)
IRFP044N
39 parameters
Housing
TO-247
Drain-source voltage Uds [V]
55V
ID (T=100°C)
37A
ID (T=25°C)
53A
Idss
25uA
Idss (max)
250uA
On-resistance Rds On
0.02 Ohms
Housing (according to data sheet)
TO-247AC
Voltage Vds(max)
55V
Assembly/installation
PCB through-hole mounting
C(in)
1500pF
Channel type
N
Ciss Gate Capacitance [pF]
1500pF
Component family
MOSFET, N-MOS
Configuration
PCB through-hole mounting
Cost)
450pF
Drain current Id (A) @ 25°C
53A
Drain current through resistor Rds [Ohm] @ Ids [A]
0.02 Ohms @ 29A
Drain-source protection
zener diode
Function
PowerMOSFET
G-S Protection
no
Gate breakdown voltage Ugs [V]
4 v
Id(imp)
180A
Manufacturer's marking
IRFP044N
Max temperature
+175°C.
Maximum dissipation Ptot [W]
120W
Number of terminals
3
Number of terminals
3
Pd (Power Dissipation, Max)
120W
Quantity per case
1
RoHS
yes
Switch-off delay tf[nsec.]
43 ns
Switch-on time ton [nsec.]
12 ns
Td(off)
43 ns
Td(on)
12 ns
Technology
HEXFET
Trr Diode (Min.)
72 ns
Type of transistor
MOSFET
Original product from manufacturer
International Rectifier

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