N-channel transistor IRFL4105PBF, SOT-223 ( TO-226 ), 55V, 3A, 5.2A, 250uA, 0.045 Ohms, SOT-223, 55V. Housing: SOT-223 ( TO-226 ). Housing (JEDEC standard): -. Drain-source voltage Uds [V]: 55V. ID (T=100°C): 3A. ID (T=25°C): 5.2A. Idss (max): 250uA. On-resistance Rds On: 0.045 Ohms. Housing (according to data sheet): SOT-223. Voltage Vds(max): 55V. Assembly/installation: surface-mounted component (SMD). C(in): 660pF. Channel type: N. Ciss Gate Capacitance [pF]: 660pF. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Cost): 230pF. Drain current Id (A) @ 25°C: 3.7A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.045 Ohms @ 3.7A. Drain-source protection: zener diode. Function: High-speed switching. G-S Protection: no. Gate breakdown voltage Ugs [V]: 4 v. Gate/source voltage Vgs: 20V. IDss (min): 25uA. Id(imp): 30A. Manufacturer's marking: FL4105. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 2.1W. Number of terminals: 3. Number of terminals: 4. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 2.1W. Quantity per case: 1. RoHS: yes. Switch-off delay tf[nsec.]: 19 ns. Switch-on time ton [nsec.]: 7.1 ns. Td(off): 19 ns. Td(on): 7.1 ns. Technology: HEXFET Power MOSFET. Trr Diode (Min.): 55 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: International Rectifier. Quantity in stock updated on 11/06/2025, 22:14