N-channel transistor IRFL210, 0.6A, 0.96A, 250uA, 1.5 Ohms, SOT-223 ( TO-226 ), SOT-223, 200V

N-channel transistor IRFL210, 0.6A, 0.96A, 250uA, 1.5 Ohms, SOT-223 ( TO-226 ), SOT-223, 200V

Quantity
Unit price
1-4
0.74$
5-24
0.63$
25-49
0.55$
50-99
0.48$
100+
0.39$
Quantity in stock: 55

N-channel transistor IRFL210, 0.6A, 0.96A, 250uA, 1.5 Ohms, SOT-223 ( TO-226 ), SOT-223, 200V. ID (T=100°C): 0.6A. ID (T=25°C): 0.96A. Idss (max): 250uA. On-resistance Rds On: 1.5 Ohms. Housing: SOT-223 ( TO-226 ). Housing (according to data sheet): SOT-223. Voltage Vds(max): 200V. Assembly/installation: surface-mounted component (SMD). C(in): 140pF. Channel type: N. Cost): 53pF. Drain-source protection: diode. G-S Protection: no. Gate/source voltage Vgs: 20V. IDss (min): 25uA. Id(imp): 7.7A. Marking on the case: FC. Note: screen printing/SMD code FC. Number of terminals: 4. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 3.1W. Quantity per case: 1. RoHS: yes. Td(off): 14 ns. Td(on): 8.2 ns. Technology: HEXFET Power MOSFET. Trr Diode (Min.): 150 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: International Rectifier. Quantity in stock updated on 11/06/2025, 22:14

Technical documentation (PDF)
IRFL210
31 parameters
ID (T=100°C)
0.6A
ID (T=25°C)
0.96A
Idss (max)
250uA
On-resistance Rds On
1.5 Ohms
Housing
SOT-223 ( TO-226 )
Housing (according to data sheet)
SOT-223
Voltage Vds(max)
200V
Assembly/installation
surface-mounted component (SMD)
C(in)
140pF
Channel type
N
Cost)
53pF
Drain-source protection
diode
G-S Protection
no
Gate/source voltage Vgs
20V
IDss (min)
25uA
Id(imp)
7.7A
Marking on the case
FC
Note
screen printing/SMD code FC
Number of terminals
4
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
3.1W
Quantity per case
1
RoHS
yes
Td(off)
14 ns
Td(on)
8.2 ns
Technology
HEXFET Power MOSFET
Trr Diode (Min.)
150 ns
Type of transistor
MOSFET
Vgs(th) max.
4 v
Vgs(th) min.
2V
Original product from manufacturer
International Rectifier