N-channel transistor IRFL110PBF, SOT-223, 100V. Housing: SOT-223. Housing (JEDEC standard): -. Drain-source voltage Uds [V]: 100V. Ciss Gate Capacitance [pF]: 180pF. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Drain current Id (A) @ 25°C: 1.5A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.25 Ohms @ 10A. Gate breakdown voltage Ugs [V]: 4 v. Manufacturer's marking: FL110. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 3.1W. Number of terminals: 3. RoHS: yes. Switch-off delay tf[nsec.]: 15 ns. Switch-on time ton [nsec.]: 6.9ns. Original product from manufacturer: Vishay (siliconix). Quantity in stock updated on 11/06/2025, 22:14