N-channel transistor IRFL024NPBF, SOT-223, 55V

N-channel transistor IRFL024NPBF, SOT-223, 55V

Quantity
Unit price
1+
1.12$
Quantity in stock: 321

N-channel transistor IRFL024NPBF, SOT-223, 55V. Housing: SOT-223. Housing (JEDEC standard): -. Drain-source voltage Uds [V]: 55V. Ciss Gate Capacitance [pF]: 400pF. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Drain current Id (A) @ 25°C: 2.8A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.075 Ohms @ 2.8A. Gate breakdown voltage Ugs [V]: 4 v. Manufacturer's marking: FL024N. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 2.1W. Number of terminals: 3. RoHS: yes. Switch-off delay tf[nsec.]: 22 ns. Switch-on time ton [nsec.]: 8.1 ns. Original product from manufacturer: International Rectifier. Quantity in stock updated on 11/06/2025, 22:14

Technical documentation (PDF)
IRFL024NPBF
16 parameters
Housing
SOT-223
Drain-source voltage Uds [V]
55V
Ciss Gate Capacitance [pF]
400pF
Component family
MOSFET, N-MOS
Configuration
surface-mounted component (SMD)
Drain current Id (A) @ 25°C
2.8A
Drain current through resistor Rds [Ohm] @ Ids [A]
0.075 Ohms @ 2.8A
Gate breakdown voltage Ugs [V]
4 v
Manufacturer's marking
FL024N
Max temperature
+150°C.
Maximum dissipation Ptot [W]
2.1W
Number of terminals
3
RoHS
yes
Switch-off delay tf[nsec.]
22 ns
Switch-on time ton [nsec.]
8.1 ns
Original product from manufacturer
International Rectifier