N-channel transistor IRFL024N, 2.3A, 2.8A, 250uA, 0.075 Ohms, SOT-223 ( TO-226 ), SOT-223, 55V. ID (T=100°C): 2.3A. ID (T=25°C): 2.8A. Idss (max): 250uA. On-resistance Rds On: 0.075 Ohms. Housing: SOT-223 ( TO-226 ). Housing (according to data sheet): SOT-223. Voltage Vds(max): 55V. Assembly/installation: surface-mounted component (SMD). C(in): 400pF. Channel type: N. Cost): 145pF. Drain-source protection: yes. Equivalents: IRFL024NPBF. Function: High-speed switching. G-S Protection: no. Gate/source voltage Vgs: 20V. IDss (min): 25uA. Id(imp): 11.2A. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 2.1W. Quantity per case: 1. RoHS: yes. Td(off): 22.2 ns. Td(on): 8.1 ns. Technology: HEXFET Power MOSFET. Trr Diode (Min.): 35 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: International Rectifier. Quantity in stock updated on 11/06/2025, 22:14