N-channel transistor IRFL014TRPBF, SOT-223, 60V

N-channel transistor IRFL014TRPBF, SOT-223, 60V

Quantity
Unit price
1+
1.68$
Quantity in stock: 90

N-channel transistor IRFL014TRPBF, SOT-223, 60V. Housing: SOT-223. Housing (JEDEC standard): -. Drain-source voltage Uds [V]: 60V. Ciss Gate Capacitance [pF]: 300pF. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Drain current Id (A) @ 25°C: 2.7A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.2 Ohms @ 1.6A. Gate breakdown voltage Ugs [V]: 4 v. Manufacturer's marking: FA. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 3.1W. Number of terminals: 3. RoHS: yes. Switch-off delay tf[nsec.]: 13 ns. Switch-on time ton [nsec.]: 10 ns. Original product from manufacturer: Vishay (ir). Quantity in stock updated on 11/06/2025, 22:14

Technical documentation (PDF)
IRFL014TRPBF
16 parameters
Housing
SOT-223
Drain-source voltage Uds [V]
60V
Ciss Gate Capacitance [pF]
300pF
Component family
MOSFET, N-MOS
Configuration
surface-mounted component (SMD)
Drain current Id (A) @ 25°C
2.7A
Drain current through resistor Rds [Ohm] @ Ids [A]
0.2 Ohms @ 1.6A
Gate breakdown voltage Ugs [V]
4 v
Manufacturer's marking
FA
Max temperature
+150°C.
Maximum dissipation Ptot [W]
3.1W
Number of terminals
3
RoHS
yes
Switch-off delay tf[nsec.]
13 ns
Switch-on time ton [nsec.]
10 ns
Original product from manufacturer
Vishay (ir)