N-channel transistor IRFL014NPBF, SOT-223, 55V
Quantity
Unit price
1+
1.40$
| Quantity in stock: 314 |
N-channel transistor IRFL014NPBF, SOT-223, 55V. Housing: SOT-223. Housing (JEDEC standard): -. Drain-source voltage Uds [V]: 55V. Ciss Gate Capacitance [pF]: 190pF. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Drain current Id (A) @ 25°C: 1.9A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.16 Ohms @ 1.9A. Gate breakdown voltage Ugs [V]: 4 v. Manufacturer's marking: FL014N. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 2.1W. Number of terminals: 3. RoHS: yes. Switch-off delay tf[nsec.]: 12 ns. Switch-on time ton [nsec.]: 6.6 ns. Original product from manufacturer: International Rectifier. Quantity in stock updated on 11/06/2025, 22:14
IRFL014NPBF
16 parameters
Housing
SOT-223
Drain-source voltage Uds [V]
55V
Ciss Gate Capacitance [pF]
190pF
Component family
MOSFET, N-MOS
Configuration
surface-mounted component (SMD)
Drain current Id (A) @ 25°C
1.9A
Drain current through resistor Rds [Ohm] @ Ids [A]
0.16 Ohms @ 1.9A
Gate breakdown voltage Ugs [V]
4 v
Manufacturer's marking
FL014N
Max temperature
+150°C.
Maximum dissipation Ptot [W]
2.1W
Number of terminals
3
RoHS
yes
Switch-off delay tf[nsec.]
12 ns
Switch-on time ton [nsec.]
6.6 ns
Original product from manufacturer
International Rectifier