N-channel transistor IRFIBF30GPBF, ITO-220AB, 900V
Quantity
Unit price
1-24
5.91$
25+
4.90$
| Quantity in stock: 80 |
N-channel transistor IRFIBF30GPBF, ITO-220AB, 900V. Housing: ITO-220AB. Housing (JEDEC standard): -. Drain-source voltage Uds [V]: 900V. Ciss Gate Capacitance [pF]: 1200pF. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Drain current Id (A) @ 25°C: 1.9A. Drain current through resistor Rds [Ohm] @ Ids [A]: 3.7 Ohms @ 1.1A. Gate breakdown voltage Ugs [V]: 4 v. Manufacturer's marking: IRFIBF30GPBF. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 35W. Number of terminals: 3. RoHS: yes. Switch-off delay tf[nsec.]: 90 ns. Switch-on time ton [nsec.]: 14 ns. Original product from manufacturer: International Rectifier. Quantity in stock updated on 11/06/2025, 22:14
IRFIBF30GPBF
16 parameters
Housing
ITO-220AB
Drain-source voltage Uds [V]
900V
Ciss Gate Capacitance [pF]
1200pF
Component family
MOSFET, N-MOS
Configuration
PCB through-hole mounting
Drain current Id (A) @ 25°C
1.9A
Drain current through resistor Rds [Ohm] @ Ids [A]
3.7 Ohms @ 1.1A
Gate breakdown voltage Ugs [V]
4 v
Manufacturer's marking
IRFIBF30GPBF
Max temperature
+150°C.
Maximum dissipation Ptot [W]
35W
Number of terminals
3
RoHS
yes
Switch-off delay tf[nsec.]
90 ns
Switch-on time ton [nsec.]
14 ns
Original product from manufacturer
International Rectifier