N-channel transistor IRFIBC40G, 2.2A, 3.5A, 500uA, 1.2 Ohms, TO-220FP, TO-220F, 600V

N-channel transistor IRFIBC40G, 2.2A, 3.5A, 500uA, 1.2 Ohms, TO-220FP, TO-220F, 600V

Quantity
Unit price
1-4
2.36$
5-24
2.06$
25-49
1.74$
50+
1.57$
Quantity in stock: 47

N-channel transistor IRFIBC40G, 2.2A, 3.5A, 500uA, 1.2 Ohms, TO-220FP, TO-220F, 600V. ID (T=100°C): 2.2A. ID (T=25°C): 3.5A. Idss (max): 500uA. On-resistance Rds On: 1.2 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 600V. Assembly/installation: PCB through-hole mounting. C(in): 1300pF. Channel type: N. Cost): 160pF. Drain-source protection: zener diode. G-S Protection: no. Gate/source voltage Vgs: 20V. IDss (min): 100uA. Id(imp): 14A. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 40W. Quantity per case: 1. RoHS: yes. Td(off): 55 ns. Td(on): 13 ns. Technology: HEXFET Power MOSFET. Trr Diode (Min.): 470ms. Type of transistor: MOSFET. Vgs(th) min.: 2V. Original product from manufacturer: International Rectifier. Quantity in stock updated on 11/06/2025, 22:14

Technical documentation (PDF)
IRFIBC40G
28 parameters
ID (T=100°C)
2.2A
ID (T=25°C)
3.5A
Idss (max)
500uA
On-resistance Rds On
1.2 Ohms
Housing
TO-220FP
Housing (according to data sheet)
TO-220F
Voltage Vds(max)
600V
Assembly/installation
PCB through-hole mounting
C(in)
1300pF
Channel type
N
Cost)
160pF
Drain-source protection
zener diode
G-S Protection
no
Gate/source voltage Vgs
20V
IDss (min)
100uA
Id(imp)
14A
Number of terminals
3
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
40W
Quantity per case
1
RoHS
yes
Td(off)
55 ns
Td(on)
13 ns
Technology
HEXFET Power MOSFET
Trr Diode (Min.)
470ms
Type of transistor
MOSFET
Vgs(th) min.
2V
Original product from manufacturer
International Rectifier