N-channel transistor IRFI640GPBF, ITO-220AB, 200V. Housing: ITO-220AB. Housing (JEDEC standard): -. Drain-source voltage Uds [V]: 200V. Ciss Gate Capacitance [pF]: 1300pF. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Drain current Id (A) @ 25°C: 9.8A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.18 Ohms @ 5.9A. Gate breakdown voltage Ugs [V]: 4 v. Manufacturer's marking: IRFI640GPBF. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 40W. Number of terminals: 3. RoHS: yes. Switch-off delay tf[nsec.]: 45 ns. Switch-on time ton [nsec.]: 14 ns. Original product from manufacturer: Vishay (ir). Quantity in stock updated on 11/06/2025, 22:14