N-channel transistor IRFI630GPBF, ITO-220AB, 200V. Housing: ITO-220AB. Housing (JEDEC standard): -. Drain-source voltage Uds [V]: 200V. Ciss Gate Capacitance [pF]: 800pF. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Drain current Id (A) @ 25°C: 5.9A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.4 Ohms @ 3.5A. Gate breakdown voltage Ugs [V]: 4 v. Manufacturer's marking: IRFI630GPBF. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 32W. Number of terminals: 3. RoHS: yes. Switch-off delay tf[nsec.]: 39 ns. Switch-on time ton [nsec.]: 9.4 ns. Original product from manufacturer: Vishay (ir). Quantity in stock updated on 11/06/2025, 22:14