N-channel transistor IRFI530GPBF, ITO-220AB, 100V
Quantity
Unit price
1-49
2.70$
50+
2.25$
| Quantity in stock: 356 |
N-channel transistor IRFI530GPBF, ITO-220AB, 100V. Housing: ITO-220AB. Housing (JEDEC standard): -. Drain-source voltage Uds [V]: 100V. Ciss Gate Capacitance [pF]: 670pF. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Drain current Id (A) @ 25°C: 9.7A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.16 Ohms @ 5.8A. Gate breakdown voltage Ugs [V]: 4 v. Manufacturer's marking: IRFI530GPBF. Max temperature: +175°C.. Maximum dissipation Ptot [W]: 42W. Number of terminals: 3. RoHS: yes. Switch-off delay tf[nsec.]: 34 ns. Switch-on time ton [nsec.]: 8.6 ns. Original product from manufacturer: Vishay (ir). Quantity in stock updated on 11/06/2025, 22:14
IRFI530GPBF
16 parameters
Housing
ITO-220AB
Drain-source voltage Uds [V]
100V
Ciss Gate Capacitance [pF]
670pF
Component family
MOSFET, N-MOS
Configuration
PCB through-hole mounting
Drain current Id (A) @ 25°C
9.7A
Drain current through resistor Rds [Ohm] @ Ids [A]
0.16 Ohms @ 5.8A
Gate breakdown voltage Ugs [V]
4 v
Manufacturer's marking
IRFI530GPBF
Max temperature
+175°C.
Maximum dissipation Ptot [W]
42W
Number of terminals
3
RoHS
yes
Switch-off delay tf[nsec.]
34 ns
Switch-on time ton [nsec.]
8.6 ns
Original product from manufacturer
Vishay (ir)