N-channel transistor IRFI520G, 5.1A, 7.2A, 250uA, 0.27 Ohms, TO-220FP, TO-220 FULLPAK, 100V

N-channel transistor IRFI520G, 5.1A, 7.2A, 250uA, 0.27 Ohms, TO-220FP, TO-220 FULLPAK, 100V

Quantity
Unit price
1-4
1.65$
5-24
1.40$
25-49
1.22$
50-99
1.08$
100+
0.87$
Quantity in stock: 95

N-channel transistor IRFI520G, 5.1A, 7.2A, 250uA, 0.27 Ohms, TO-220FP, TO-220 FULLPAK, 100V. ID (T=100°C): 5.1A. ID (T=25°C): 7.2A. Idss (max): 250uA. On-resistance Rds On: 0.27 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220 FULLPAK. Voltage Vds(max): 100V. C(in): 360pF. Channel type: N. Cost): 150pF. Drain-source protection: no. Function: DC/DC voltage converter. G-S Protection: yes. Gate/source voltage Vgs: 20V. IDss (min): 25uA. Id(imp): 29A. Operating temperature: -55...+175°C. Pd (Power Dissipation, Max): 37W. Quantity per case: 1. Td(off): 19 ns. Td(on): 8.8 ns. Technology: third-generation power MOSFET transistor. Trr Diode (Min.): 130 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: Vishay. Quantity in stock updated on 11/06/2025, 22:14

Technical documentation (PDF)
IRFI520G
27 parameters
ID (T=100°C)
5.1A
ID (T=25°C)
7.2A
Idss (max)
250uA
On-resistance Rds On
0.27 Ohms
Housing
TO-220FP
Housing (according to data sheet)
TO-220 FULLPAK
Voltage Vds(max)
100V
C(in)
360pF
Channel type
N
Cost)
150pF
Drain-source protection
no
Function
DC/DC voltage converter
G-S Protection
yes
Gate/source voltage Vgs
20V
IDss (min)
25uA
Id(imp)
29A
Operating temperature
-55...+175°C
Pd (Power Dissipation, Max)
37W
Quantity per case
1
Td(off)
19 ns
Td(on)
8.8 ns
Technology
third-generation power MOSFET transistor
Trr Diode (Min.)
130 ns
Type of transistor
MOSFET
Vgs(th) max.
4 v
Vgs(th) min.
2V
Original product from manufacturer
Vishay