N-channel transistor IRFD220PBF, DIP, 200V, 0.38A, 0.8A, 250uA, 0.8 Ohms, DH-1 house, DIP-4, 200V. Housing: DIP. Housing (JEDEC standard): -. Drain-source voltage Uds [V]: 200V. ID (T=100°C): 0.38A. ID (T=25°C): 0.8A. Idss (max): 250uA. On-resistance Rds On: 0.8 Ohms. Housing (according to data sheet): DH-1 house, DIP-4. Voltage Vds(max): 200V. Assembly/installation: PCB through-hole mounting. C(in): 22pF. Channel type: N. Ciss Gate Capacitance [pF]: 260pF. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Cost): 53pF. Drain current Id (A) @ 25°C: 0.8A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.5 Ohms @ 0.4A. Drain-source protection: zener diode. G-S Protection: no. Gate breakdown voltage Ugs [V]: 4 v. Gate/source voltage Vgs: 20V. IDss (min): 25uA. Id(imp): 6.4A. Manufacturer's marking: IRFD220PBF. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 1W. Number of terminals: 4. Number of terminals: 4. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 1W. Quantity per case: 1. RoHS: yes. Switch-off delay tf[nsec.]: 19 ns. Switch-on time ton [nsec.]: 7.2 ns. Td(off): 19 ns. Td(on): 7.2 ns. Technology: third-generation power MOSFET transistor. Trr Diode (Min.): 150 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: Vishay. Quantity in stock updated on 11/06/2025, 22:14