N-channel transistor IRFD210, 0.38A, 0.6A, 250uA, 1.5 Ohms, DIP, DH-1 house, DIP-4, 200V. ID (T=100°C): 0.38A. ID (T=25°C): 0.6A. Idss (max): 250uA. On-resistance Rds On: 1.5 Ohms. Housing: DIP. Housing (according to data sheet): DH-1 house, DIP-4. Voltage Vds(max): 200V. Assembly/installation: PCB through-hole mounting. C(in): 140pF. Channel type: N. Cost): 53pF. Drain-source protection: zener diode. G-S Protection: no. Gate/source voltage Vgs: 20V. IDss (min): 25uA. Id(imp): 4.8A. Number of terminals: 4. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 1W. Quantity per case: 1. RoHS: yes. Td(off): 14 ns. Td(on): 8.2 ns. Technology: HEXFET Power MOSFET. Trr Diode (Min.): 150 ns. Type of transistor: MOSFET. Vgs(th) min.: 2V. Original product from manufacturer: International Rectifier. Quantity in stock updated on 11/06/2025, 22:14